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IDT70T651S

Features: ` True Dual-Port memory cells which allow simultaneous access of the same memory location` High-speed access Commercial: 8/10/12/15ns (max.) Industrial: 10/12ns (max.)` RapidWrite Mode simplifies high-speed consecutive write cycles` Dual chip enables allow for depth expansion without e...

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SeekIC No. : 004372093 Detail

IDT70T651S: Features: ` True Dual-Port memory cells which allow simultaneous access of the same memory location` High-speed access Commercial: 8/10/12/15ns (max.) Industrial: 10/12ns (max.)` RapidWrite Mode s...

IDT70T651S Data Sheet

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Part Number:
IDT70T651S
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` True Dual-Port memory cells which allow simultaneous access of the same memory location
` High-speed access
   Commercial: 8/10/12/15ns (max.)
   Industrial: 10/12ns (max.)
` RapidWrite Mode simplifies high-speed consecutive write cycles
` Dual chip enables allow for depth expansion without external logic
` IDT70T651/9 easily expands data bus width to 72 bits or more using the Master/Slave select when cascading more
than one device
` M/S = VIH for BUSY output flag on Master,M/S = VIL for BUSY input on Slav
` Busy and Interrupt Flags
` On-chip port arbitration logic
` Full on-chip hardware support of semaphore signaling between ports
` Fully asynchronous operation from either port
` Separate byte controls for multiplexed bus and bus matching compatibility
` Sleep Mode Inputs on both ports
` Supports JTAG features compliant to IEEE 1149.1
` Single 2.5V (±100mV) power supply for core
` LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV) power supply for I/Os and control signals on each port
` Available in a 256-ball Ball Grid Array, 208-pin Plastic Quad Flatpack and 208-ball fine pitch Ball Grid Array.
` Industrial temperature range (40°C to +85°C) is available for selected speeds


Pinout

Connection Diagram


Specifications

Symbol Rating
Commercial
& Industrial
Unit
VTERM
(VDD)		 VDD Terminal Voltage
with Respect to GND
-0.5 to +3.6
V
VTERM(2)
(VDDQ)		 VDDQ Terminal Voltage
with Respect to GND
-0.3 to VDDQ + 0.3
V
VTERM(2)
(INPUTS and I/O's)		 Input and I/O Terminal
Voltage with Respect to GND
-0.3 to VDDQ + 0.3
V
TBIAS(3) Temperature Under Bias
55 to +125
TSTG Storage Temperature
65 to +150
TJN Junction Temperature
+150
IOUT(For VDDQ = 3.3V) DC Output Current
50
mA
IOUT(For VDDQ = 2.5V) DC Output Current
40
mA

NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. This is a steady-state DC parameter that applies after the power supply has reached its nominal operating value. Power sequencing is not necessary; however, the voltage on any Input or I/O pin cannot exceed VDDQ during power supply ramp up.
3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.



Description

The IDT70T651S is a high-speed 256/128K x 36 Asynchronous
Dual-Port Static RAM. The IDT70T651/9 is designed to be used as a
stand-alone 9216/4608K-bit Dual-Port RAM or as a combination MASTER/
SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 72-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic.

This device provides two independent ports with separate control, address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature controlled by the chip enables (eitherCE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode.

The IDT70T651S has a RapidWrite Mode which allows the designer to perform back-to-back write operations without pulsing the R/W input each cycle. This is especially significant at the 8 and 10ns cycle times of the IDT70T651/9, easing design considerations at these high performance levels.

The IDT70T651S can support an operating voltage of either 3.3V or 2.5V on one or both ports, controlled by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V.




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