IDT70824S

NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. VTERM must not  exceed Vcc + 10% for more than 25% of the cycle time or 10ns maximum, and is limited to < 20mA for the period of V_TERM  > Vcc + 10%.

The IDT70824S is a high-speed 4K x 16-Bit Sequential Access Random Access Memory (SARAM). The SARAM offers a single-chip solution to buffer data sequentially on one port, and be accessed randomly (asynchronously) through the other port. The device has a Dual-Port RAM based architecture with a standard SRAM interface for the random (asynchronous) access port, and a clocked interface with counter sequencing for the sequential (synchronous) access port.

Fabricated using CMOS high-performance technology, this memory device typically operates on less than 775mW of power at maximum high-speed clock-to-data and Random Access. An automatic power down feature, controlled by CE, permits the on-chip circuitry of each port to enter a very low standby power mode.

The IDT70824S is packaged in a 80-pin Thin Quad Flatpack (TQFP) or 84-pin Pin Grid Array (PGA). Military grade product is manufactured in compliance with the latest revision of MIL-PRF-38535 QML, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.