Features: ` High-speed (equal access and cycle time) Military: 25/45ns (max.) Industrial: 25ns (max.) Commercial: 15/20/25ns (max.)` Low power consumption` Battery backup operation-2V data retention voltage (IDT6168LA only)` Available in high-density 20-pin ceramic or plastic DIP and 20-pin lea...
IDT6168LA25D_1171970: Features: ` High-speed (equal access and cycle time) Military: 25/45ns (max.) Industrial: 25ns (max.) Commercial: 15/20/25ns (max.)` Low power consumption` Battery backup operation-2V data retent...
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Features: • IDT54/74FCT139 equivalent to FAST™ speed• IDT54/74FCT139A 35% faster...
Features: • IDT54/74FCT139 equivalent to FAST™ speed• IDT54/74FCT139A 35% faster...
Features: • IDT54/74FCT139 equivalent to FAST™ speed• IDT54/74FCT139A 35% faster...
` High-speed (equal access and cycle time)
Military: 25/45ns (max.)
Industrial: 25ns (max.)
Commercial: 15/20/25ns (max.)
` Low power consumption
` Battery backup operation-2V data retention voltage (IDT6168LA only)
` Available in high-density 20-pin ceramic or plastic DIP and 20-pin leadless chip carrier (LCC)
` Produced with advanced CMOS high-performance technology
` CMOS process virtually eliminates alpha particle soft-error rates
` Bidirectional data input and output
` Military product compliant to MIL-STD-883, Class B
Symbol |
Rating |
Com'l. |
Mil. |
Unit |
VTERM |
Terminal Voltage with Respect to GND |
-0.5 to +7.0 |
-0.5 to +7.0 |
V |
TA |
Operating Temperature |
0 to +70 |
-55 to +125 |
|
TBIAS |
Temperature Under Bias |
-55 to +125 |
-65 to +135 |
|
TSTG |
Storage Temperature |
-55 to +125 |
-65 to +150 |
|
PT |
Power Dissipation |
1.0 |
1.0 |
W |
IOUT |
DC Output Current |
50 |
1.0 |
mA |
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
The IDT6168SA is a 16,384-bit high-speed static RAM organized as 4K x 4. It is fabricated using lDT's high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective approach for high-speed memory applications.
Access times as fast 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to, and remain in, a standby mode as long as CS remains HIGH. This capability rovides significant system-level power and cooling savings. The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1W operating off a 2V battery. All inputs and outputs of the IDT6168 are TTL-compatible and operate from a single 5V supply.
The IDT6168SA is packaged in either a space saving 20-pin, 300-mil ceramic or plastic DIP or a 20-pin LCC providing high board-level packing densities.
Military grade product is manufactured in compliance with the latest revision of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.