IDT6168LA

Features: `High-speed (equal access and cycle time) Military: 25/45ns (max.) Industrial: 25ns (max.) Commercial: 15/20/25ns (max.)` Low power consumption` Battery backup operation-2V data retention voltage (IDT6168LA only)` Available in high-density 20-pin ceramic or plastic DIP and 20-pin lead...

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IDT6168LA Picture
SeekIC No. : 004371921 Detail

IDT6168LA: Features: `High-speed (equal access and cycle time) Military: 25/45ns (max.) Industrial: 25ns (max.) Commercial: 15/20/25ns (max.)` Low power consumption` Battery backup operation-2V data retenti...

floor Price/Ceiling Price

Part Number:
IDT6168LA
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/8/14

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Product Details

Description



Features:

` High-speed (equal access and cycle time)
    Military: 25/45ns (max.)
    Industrial: 25ns (max.)
    Commercial: 15/20/25ns (max.)
` Low power consumption
` Battery backup operation-2V data retention voltage (IDT6168LA only)
` Available in high-density 20-pin ceramic or plastic DIP and 20-pin leadless chip carrier (LCC)
` Produced with advanced CMOS high-performance technology
` CMOS process virtually eliminates alpha particle soft-error rates
` Bidirectional data input and output
` Military product compliant to MIL-STD-883, Class B



Pinout

  Connection Diagram


Specifications

Power Dissipation
Symbol Rating Commercial Military Unit
VTERM Terminal Voltage
with Respect
to GND
-0.5 to +7.0 -0.5 to +7.0 V
TA Operating
Temperature
0 to +70 -55 to +125
TBIAS Temperature
Under Bias
-55 to +125 -65 to +135
TSTG Storage
Temperature
-55 to +125 -65 to +150

 PT

 Power Dissipation

 1.0

 1.0

 W

IOUT DC Output
Current
50 50 mA



Description

The IDT6168LA is a 16,384-bit high-speed static RAM organized as 4K x 4. It is fabricated using lDT's high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective approach for high-speed memory applications.

Access times as fast 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to, and remain in, a standby mode as long as CS remains HIGH. This capability provides significant system-level power and cooling savings. The low-power (LA)   version also offers a battery backup data retention capability where the circuit typically consumes only 1µW operating off a 2V battery. All inputs and outputs of the IDT6168 are TTL-compatible and operate from a single 5V supply.

The IDT6168LA is packaged in either a space saving 20-pin, 300-mil ceramic or plastic DIP or a 20-pin LCC providing high board-level packing densities.

Military grade product is manufactured in compliance with the latest revision of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.




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