IDT61298SA

NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. VTERM must not exceed VCC + 0.5V.

The IDT61298SA is a 262,144-bit high-speed static RAM organized as 64K x 4. It is fabricated using IDT's highperformance, high-reliability CMOS technology. This state-ofthe- art technology, combined with innovative circuit design techniques, provides a cost-effective approach for memory intensive applications.

The IDT61298SA features two memory control functions: Chip Select (CS) and Output Enable (OE). These two functions greatly enhance the IDT61298SA's overall flexibility in high-speed memory applications.

Access times as fast as 12ns are available. The IDT61298SA offers a reduced power standby mode, ISB1, which enables the designer to considerably reduce device power requirements. This capability significantly decreases system power and cooling levels, while greatly enhancing system reliability.

All inputs and outputs are TTL-compatible and the device operates from a single 5 volt supply. Fully static asynchronous