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IDT54FCT3827BPYB

Features: `0.5 MICRON CMOS Technology`ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)`25 mil Center SSOP Packages`Extended commercial range of -40 to +85`VCC = 3.3V ±0.3V, Normal Range or VCC = 2.7V to 3.6V, Extended Range`CMOS power levels (0.4W typ. static...

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SeekIC No. : 004371793 Detail

IDT54FCT3827BPYB: Features: `0.5 MICRON CMOS Technology`ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)`25 mil Center SSOP Packages`Extended commercial range of -40 to +85`VCC ...

IDT54FCT3827BPYB Data Sheet

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Part Number:
IDT54FCT3827BPYB
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`0.5 MICRON CMOS Technology
`ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)
`25 mil Center SSOP Packages
`Extended commercial range of -40 to +85
`VCC = 3.3V ±0.3V, Normal Range or VCC = 2.7V to 3.6V, Extended Range
`CMOS power levels (0.4W typ. static)
`Rail-to-Rail output swing for increased noise margin
`Military product compliant to MIL-STD-883, Class B

 




Pinout

Connection Diagram


Specifications

Symbol Rating Commercial Military Unit
VTERM(2) Terminal Voltagewith Respect toGND -0.5 to +4.6 -0.5 to +4.6 V
VTERM(3) Terminal Voltagewith Respect toGND -0.5 to +7.0 -0.5 to +7.0 V
VTERM(4) Terminal Voltagewith Respect toGND -0.5 to with to VCC + 0.5 -0.5 to VCC + 0.5 V
TA Operating Temperature -40 to +85 -55 to +125
TBIAS Temperature Under Bias -55 to +125 -65 to +135
TSTG Storage Temperature -55 to +125 -65 to +150
PT Power Dissipation 1.0 1.0 W
IOUT DC Output Current -60 to +60 -60 to +60 mA


NOTES:
1.Stresses greater than those listed under ABSOLUTE MAXIMUM RAT- INGS may cause permanent damage to the device.  This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  Exposure to absolute maximum rating conditions for ex- tended periods may affect reliability.
2.Vcc  terminals.
3.Input terminals.
4.Output and I/O terminals.




Description

The IDT54FCT3827BPYB 10-bit bus drivers are built using an advanced dual metal CMOS technology.  These high speed, low power buffers are ideal for high-performance bus interface buffering for wide data/address paths or buses carrying parity. The 10-bit buffers have NAND-ed output enables for maxi- mum control flexibility.

All of the IDT54FCT3827BPYB high performance interface compo- nents are designed for high-capacitance load drive capability, while providing low-capacitance bus loading at both inputs and outputs.




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