IDT54FCT245PYB

Features: `0.5 MICRON CMOS Technology`ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)`25 mil Center SSOP and QSOP Packages`Extended commercial range of -40 to +85`VCC = 3.3V ?0.3V, Normal Range or VCC = 2.7V to 3.6V, Extended Range`CMOS power levels (0...

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SeekIC No. : 004371775 Detail

IDT54FCT245PYB: Features: `0.5 MICRON CMOS Technology`ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)`25 mil Center SSOP and QSOP Packages`Extended commercial range of ...

floor Price/Ceiling Price

Part Number:
IDT54FCT245PYB
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

`0.5 MICRON CMOS Technology
`ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)
`25 mil Center SSOP and QSOP Packages
`Extended commercial range of -40 to +85
`VCC = 3.3V ?0.3V, Normal Range or VCC = 2.7V to 3.6V, Extended Range
`CMOS power levels (0.4W typ. static)
`Rail-to-Rail output swing for increased noise margin
`Military product compliant to MIL-STD-883, Class B



Pinout

  Connection Diagram


Specifications

Symbol Rating Commercial Military Unit
VTERM(2) Terminal Voltagewith Respect toGND -0.5 to +4.6 -0.5 to +4.6 V
VTERM(3) Terminal Voltagewith Respect toGND -0.5 to +7.0 -0.5 to +7.0 V
VTERM(4) Terminal Voltagewith Respect toGND -0.5 to with to VCC + 0.5 -0.5 to VCC + 0.5 V
TA Operating Temperature -40 to +85 -55 to +125
TBIAS Temperature Under Bias -55 to +125 -65 to +135
TSTG Storage Temperature -55 to +125 -65 to +150
PT Power Dissipation 1.0 1.0 W
IOUT DC Output Current -60 to +60 -60 to +60 mA

NOTES:                                                                                                          2650 lnk 03
1.Stresses greater than those listed under ABSOLUTE MAXIMUM RAT- INGS may cause permanent damage to the device.  This is a stress rating only and functional operation of the device at these or any other condi- tions above those indicated in the operational sections of this specifica- tion is not implied.  Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2.Vcc  terminals.
3.Input terminals.
4.Output and I/O terminals.




Description

The IDT54FCT245PYB octal  transceivers are built using ad- vanced dual metal CMOS technology.  These high-speed, low-power transceivers are ideal for synchronous communi- cation between two busses (A and B).  The direction control pin (DIR) controls the direction of data flow.  The output enable pin () overrides the direction control and disables both ports. All inputs are designed with hysteresis for improved noise margin.

The IDT54FCT245PYB have series current limiting resistors. These offer low ground bounce, minimal undershoot, and controlled output fall times-reducing the need for external series terminating resistors.




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