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IDT54FCT16373AT

Features: • Common features: 0.5 MICRON CMOS Technology High-speed, low-power CMOS replacement for ABT functions Typical tSK(o) (Output Skew) < 250ps Low input and output leakage 1A (max.) ESD > 2000V per MIL-STD-883, Method 3015;> 200V using machine model (C = 200pF, R = 0) P...

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SeekIC No. : 004371744 Detail

IDT54FCT16373AT: Features: • Common features: 0.5 MICRON CMOS Technology High-speed, low-power CMOS replacement for ABT functions Typical tSK(o) (Output Skew) < 250ps Low input and output leakage 1A (ma...

IDT54FCT16373AT Data Sheet

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Part Number:
IDT54FCT16373AT
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Common features:
  0.5 MICRON CMOS Technology
  High-speed, low-power CMOS replacement for ABT functions
  Typical tSK(o) (Output Skew) < 250ps
  Low input and output leakage 1A (max.)
  ESD > 2000V per MIL-STD-883, Method 3015;> 200V using machine model (C = 200pF, R = 0)
  Packages include 25 mil pitch SSOP, 19.6 mil pitch
       TSSOP,15.7 mil pitch TVSOP and 25 mil pitch Cerpack
  Extended commercial range of -40°C to +85°C
  VCC = 5V ±10%
• Features for FCT16373T/AT/CT/ET:
  High drive outputs (-32mA IOH, 64mA IOL)
  Power off disable outputs permit "live insertion"
  Typical VOLP (Output Ground Bounce) < 1.0V at VCC = 5V, TA = 25°C
• Features for FCT162373T/AT/CT/ET:
  Balanced Output Drivers: ±24mA (commercial),±16mA (military)
  Reduced system switching noise
  Typical VOLP (Output Ground Bounce) < 0.6V at VCC = 5V,TA = 25°C


Pinout

Connection Diagram


Specifications

.
Symbol

Description

Max.
Unit
VTERM(2) Terminal Voltage with Respect to GND
-0.5 to +7.0
V
VTERM(3) Terminal Voltage with Respect to GND
0.5 to
VCC +0.5
 V
TSTG Storage Temperature
65 to +150
IOUT DC Output Current
60 to +120
mA

NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. All device terminals except FCT162XXXT Output and I/O terminals.
3. Output and I/O terminals for FCT162XXXT.


Description

The IDT54FCT16373AT 16-bit transparent D-type latches are built using advanced dual metal CMOS technology. These high-speed, low-power latches are ideal for temporary storage of data. They can be used for implementing memory address latches, I/O ports, and bus drivers. The Output Enable and Latch Enable controls are organized to operate each device as two 8-bit latches, or one 16-bit latch. Flow-through organization of signal pins simplifies layout. All inputs are designed with hysteresis for improved noise margin.

The IDT54FCT16373AT are ideally suited for driving high-capacitance loads and low-impedance backplanes. The output buffers are designed with power off disable capability to allow "live insertion" of boards when used as backplane drivers.

The IDT54FCT16373AT have balanced output drive with current limiting resistors. This offers low ground bounce, minimal undershoot, and controlled output fall times reducing the need for external series terminating resistors. The FCT162373T/AT/CT/ET are plug-in replacements for the IDT54FCT16373AT for on-board interface applications.




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