Features: • A, B, C and D speed grades• Low input and output leakage £1mA (max.)• CMOS power levels• True TTL input and output compatibility VOH = 3.3V (typ.) VOL = 0.3V (typ.)• High drive outputs (-15mA IOH, 48mA IOL)• Meets or exceeds JEDEC standard 18...
IDT29FCT520AT: Features: • A, B, C and D speed grades• Low input and output leakage £1mA (max.)• CMOS power levels• True TTL input and output compatibility VOH = 3.3V (typ.) VOL = 0...
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Symbol | Rating | Commercial | Military | Unit |
VTERM | Terminal Voltage with Respect to GND |
-0.5 to +7.0 | -0.5 to +7.0 | V |
VTERM(3) |
Terminal Voltage |
0.5 to |
0.5 to |
V |
TA | Operating Temperature |
0 to +70 | -55 to +125 | |
TBIAS | Temperature Under Bias |
-55 to +125 | -65 to +135 | |
TSTG | Storage Temperature |
-55 to +125 | -65 to +150 | |
PT |
Power Dissipation |
0.5 |
0.5 |
W |
IOUT | DC Output Current |
60 to +120 | 60 to +120 | mA |
The IDT29FCT520AT/BT/CT/DT and IDT29FCT521AT/BT/CT/DT each contain four 8-bit positive edge-triggered registers. These may be operated as a dual 2-level or as a single 4-level pipeline. A single 8-bit input is provided and any of the four registers is available at the 8-bit, 3-state output.
These devices differ only in the way data is loaded into and between the registers in 2-level operation. The difference is illustrated in Figure 1. In the IDT29FCT520AT/BT/CT/DT when data is entered into the first level (I = 2 or I = 1), the existing data in the first level is moved to the second level. In the IDT29FCT521AT/BT/CT/DT, these instructions simply cause the data in the first level to be overwritten. Transfer of data to the second level is achieved using the 4-level shift instruction (I = 0). This transfer also causes the first level to change. In either part I=3 is for hold.