IDB30E120

Diodes (General Purpose, Power, Switching) FAST SWITCH EMCON DIODE 1200V 30A

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SeekIC No. : 00136704 Detail

IDB30E120: Diodes (General Purpose, Power, Switching) FAST SWITCH EMCON DIODE 1200V 30A

floor Price/Ceiling Price

US $ .96~1.45 / Piece | Get Latest Price
Part Number:
IDB30E120
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.45
  • $1.2
  • $1.08
  • $.96
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/7/15

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Product Details

Quick Details

Product : Switching Diodes Peak Reverse Voltage : 1200 V
Forward Continuous Current : 50 A Max Surge Current : 102 A
Configuration : Single Recovery Time : 380 ns
Forward Voltage Drop : 1.7 V Maximum Reverse Leakage Current : 100 uA
Maximum Power Dissipation : 138 W Operating Temperature Range : - 55 C to + 150 C
Package / Case : TO-263-3-2 Packaging : Reel    

Description

Product : Switching Diodes
Packaging : Reel
Operating Temperature Range : - 55 C to + 150 C
Configuration : Single
Maximum Reverse Leakage Current : 100 uA
Package / Case : TO-263-3-2
Peak Reverse Voltage : 1200 V
Forward Voltage Drop : 1.7 V
Forward Continuous Current : 50 A
Max Surge Current : 102 A
Recovery Time : 380 ns
Maximum Power Dissipation : 138 W


Features:

·1200 V EmCon® technology
·Fast recovery
·Soft switching
·Low reverse recovery charge
·Low forward voltage
·Easy paralleling

 




Specifications

Parameter Symbol Value Unit
Repetitive peak reverse voltage VRRM 1200 V
Continous forward current
TC=25°C
TC=90°C
IF 50
30
A
Surge non repetitive forward current
TC=25°C, tp=10 ms, sine halfwave
IFSM 102
Maximum repetitive forward current
TC=25°C, tp limited by Tjmax, D=0.5
IFRM 76.5
Power dissipation
TC=25°C
TC=90°C
Ptot 138
66
W
Operating and storage temperature Tj , Tstg -55...+150 °C
Soldering temperature
1.6mm(0.063 in.) from case for 10s
TS 260 °C



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