ICPL2530

Features: ·High speed - 1 MBits/s·High Common Mode Transient Immunity 1000V/ms·TTL Compatible·3 MHz Bandwidth·Open Collector Outputs·2500V RMS Withstand Test Voltage,1 Min ·ICPL2531 has improved noise shield which gives superior common mode rejection·Options :-10mm lead spread - add G after part n...

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ICPL2530 Picture
SeekIC No. : 004370675 Detail

ICPL2530: Features: ·High speed - 1 MBits/s·High Common Mode Transient Immunity 1000V/ms·TTL Compatible·3 MHz Bandwidth·Open Collector Outputs·2500V RMS Withstand Test Voltage,1 Min ·ICPL2531 has improved noi...

floor Price/Ceiling Price

Part Number:
ICPL2530
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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evaluate  (4.8 stars)

Upload time: 2024/11/24

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Product Details

Description



Features:

·High speed - 1 MBits/s
·High Common Mode Transient Immunity 1000V/ms
·TTL Compatible
·3 MHz Bandwidth
·Open Collector Outputs
·2500V RMS Withstand Test Voltage,1 Min
·ICPL2531 has improved noise shield which gives superior common mode rejection
·Options :-10mm lead spread - add G after part no.Surface mount - add SM after part no.Tape&reel - add SMT&R after part no.
·All electrical parameters 100% tested
· Custom electrical selections available



Application

·Line receivers
·Pulse transformer replacement
·Wide bandwidth analog coupling
·Output interface to CMOS-LSTTL-TTL



Pinout

  Connection Diagram


Specifications

Storage Temperature ........-55 to + 125
Operating Temperature....... -55 to + 100
Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260



Description

These dual channel diode-transistor optocouplers of the ICPL2530 use a light emitting diode and an integrated photon detector to provide 2500Volts RMS electrical isolation between input and output. Seperate connection for the photodiode bias and output transistor collector of the ICPL2530 improve the speed up to a hundred times that of a conventional photo-transistor coupler by reducing the base-collector capacitan




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