IC43R16160

Operating temperature range ...........................0 to 70
Storage temperature range .........................-55 to 150
V_DDSupply Voltage Relative to V_SS................-1V to +3.6V
V_DDQ Supply Voltage Relative to V_SS.............-1V to +3.6V
VREF and Inputs Voltage Relative to V_SS.......-1V to +3.6V
I/O Pins Voltage Relative to V_SS........ -0.5V to V_DDQ+0.5V
Power dissipation ................................................... 1.6 W
Data out current (short circuit) .............................. 50 mA

*Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

The ICSI IC43R16160 is a four bank DDR DRAM organized as 4 banks x 4Mbit x 16. The IC43R16160 achieves high speed data transfer rates by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock.

All of the control, address, circuits are synchronized with the positive edge of an externally supplied clock. I/O transactions of the IC43R16160 are ocurring on both edges of DQS. Operating the four memory banks in an interleaved fashion allows random access operation to occur at a higher rate than is possible with standard DRAMs. A sequential and gapless data rate is possible depending on burst length, CAS latency and speed grade of the device.