Features: • DC =5V @ 111mA (Typ.)• RF =1.91 GHz, PinRF = -10 dBm;• LO =1.7 GHz, PinLO = 0 dBm;• IF = 210 MHz unless otherwise specified• High Linearity: 23.1 dBm IIP3(typ)• Conversion Gain: 9.4 dB typical• Low Noise Figure: 11.6 dB• Wide band operati...
IAM-93516: Features: • DC =5V @ 111mA (Typ.)• RF =1.91 GHz, PinRF = -10 dBm;• LO =1.7 GHz, PinLO = 0 dBm;• IF = 210 MHz unless otherwise specified• High Linearity: 23.1 dBm IIP3(t...
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Symbol | Parameter | Units | Absolute maximum |
VD | Supply Voltage [2] | V | 7 |
PinRF | CW RF Input Power [2] | dBm | 30 |
PinLO | CW LO Input Power [2] | dBm | 18 |
TCH | Channel Temperature | °C | 150 |
TSTG | Storage Temperature | °C | -65 to 150 |
ch_b | Thermal Resistance [4] | °C/W | 39 |
Agilent Technologies's IAM- 93516 is a high linearity GaAs FET Mixer using 0.5um enhancement mode pHEMT technology. This device houses in a 3x3 LPCC package. The IAM-93516 has a built-in LO buffer amplifier and an IF amplification stage that serve as an ideal solution for reducing board space and delivering excellent high IIP3, gain and isolation with a low LO drive power. The device is designed with a differential configuration to provide good noise immunity. The LO port is 50 ohm matched and can be driven differential or single ended. An interstage match is introduced between the mixer and amplifier stage to allow device tuning at the desired RF and LO frequency. The interstage match can be a simple low pass, high pass or intermediate frequency trap.
The amplifier output port is 200 ohm matched and fully differential. The simple matching at the RF port provides for optimum input return loss, noise figure and IIP3 performance. The IAM-93516 is ideally suited for frequency down conversion for base station radio card receiver, microwave link receiver, MMDS,
modulation and demodulation for receiver and general purpose resistive FET mixer, which require high linearity. All devices are 100% RF and DC tested.