Features: Avalanche Rugged TechnologyRugged Gate Oxide Technology Lower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 25 mA (Max.) @ VDS = 900VLow RDS(ON): 2.300 W (Typ.)Specifications Symbol Characteristic Value Units VDSS Drain-to-Source Vol...
I5N90A: Features: Avalanche Rugged TechnologyRugged Gate Oxide Technology Lower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 25 mA (Max.) @ VDS = 900VLow RDS(ON):...
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Symbol | Characteristic | Value | Units |
VDSS | Drain-to-Source Voltage | 900 | V |
ID | Continuous Drain Current (TC=25 OC) | 5 | A |
Continuous Drain Current (TC=100 OC) | 3.2 | A | |
IDM | Drain Current-Pulsed | 20 | V |
VGS | Gate-to-Source Voltage | +30 | mJ |
EAS | Single Pulsed Avalanche Energy | 529 | A |
IAR | Avalanche Current | 5 | mJ |
EAR | Repetitive Avalanche Energy | 14 | V/ns |
dv/dt | Peak Diode Recovery dv/dt | 1.5 | W |
PD | Total Power Dissipation (TA=25 OC) | 3.1 | W W/OC |
Total Power Dissipation (TC=25 OC) Linear Derating Factor |
140 1.12 |
OC | |
TJ , TSTG | Operating Junction and Storage Temperature Range | - 55 to +150 | |
TL | Maximum Lead Temp. for Soldering Purposes, 1/8 " from case for 5-seconds | 300 |