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I5N60A

Features: Avalanche Rugged TechnologyRugged Gate Oxide Technology Lower Input Capacitancemproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 25 A (Max.) @ VDS = 600VLower RDS(ON) : 1.81 (Typ.)Specifications Symbol Characteristic Value Units VDSS Drain-to-Source Volta...

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SeekIC No. : 004370187 Detail

I5N60A: Features: Avalanche Rugged TechnologyRugged Gate Oxide Technology Lower Input Capacitancemproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 25 A (Max.) @ VDS = 600VLower RDS(ON) ...

I5N60A Data Sheet

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Part Number:
I5N60A
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/2/15

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Product Details

Description



Features:

Avalanche  Rugged  Technology
Rugged  Gate  Oxide  Technology
Lower  Input  Capacitance
mproved  Gate  Charge
Extended  Safe  Operating  Area
Lower  Leakage  Current  :  25 A (Max.)  @  VDS = 600V
Lower  RDS(ON) :  1.81 (Typ.)


Specifications

Symbol Characteristic Value Units
VDSS Drain-to-Source Voltage 600 V
ID Continuous Drain Current (TC=25) 4.5 A
Continuous Drain Current (TC=100) 2.8 A
IDM Drain Current-Pulsed 18 V
VGS Gate-to-Source Voltage +30 mJ
EAS Single Pulsed Avalanche Energy 331 A
IAR Avalanche Current 4.5 mJ
EAR Repetitive Avalanche Energy 11 V/ns
dv/dt Peak Diode Recovery dv/dt 3.0 W
PD Total Power Dissipation (TC=25)
Linear Derating Factor		 110
0.88		 W
W/
TJ , TSTG Operating Junction and Storage Temperature Range - 55 to +150
TL Maximum Lead Temp. for Soldering Purposes, 1/8 " from case for 5-seconds 300



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