Features: Avalanche Rugged TechnologyRugged Gate Oxide Technology Lower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 25 A (Max.) @ VDS = 600VLower RDS(ON): 2.037 (Typ.)Specifications Symbol Characteristic Value Units VDSS Drain-to-Source Volt...
I4N60A: Features: Avalanche Rugged TechnologyRugged Gate Oxide Technology Lower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 25 A (Max.) @ VDS = 600VLower RDS(ON)...
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Symbol | Characteristic | Value | Units |
VDSS | Drain-to-Source Voltage | 600 | V |
ID | Continuous Drain Current (TC=25 OC) | 4 | A |
Continuous Drain Current (TC=100 OC) | 2.5 | ||
IDM | Drain Current-Pulsed | 16 | A |
VGS | Gate-to-Source Voltage | +30 | V |
EAS | Single Pulsed Avalanche Energy | 262 | mJ |
IAR | Avalanche Current | 4 | A |
EAR | Repetitive Avalanche Energy | 10 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 3.0 | V/ns |
PD | Total Power Dissipation (TA=25 OC) | 3.1 | W |
Total Power Dissipation (TC=25 OC) Linear Derating Factor |
100 0.8 |
W W/OC | |
TJ , TSTG | Operating Junction and Storage Temperature Range | - 55 to +150 | OC |
TL | Maximum Lead Temp. for Soldering Purposes, 1/8 " from case for 5-seconds | 300 |