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I4N60A

Features: Avalanche Rugged TechnologyRugged Gate Oxide Technology Lower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 25 A (Max.) @ VDS = 600VLower RDS(ON): 2.037 (Typ.)Specifications Symbol Characteristic Value Units VDSS Drain-to-Source Volt...

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SeekIC No. : 004370181 Detail

I4N60A: Features: Avalanche Rugged TechnologyRugged Gate Oxide Technology Lower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 25 A (Max.) @ VDS = 600VLower RDS(ON)...

I4N60A Data Sheet

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Part Number:
I4N60A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/13

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Product Details

Description



Features:

Avalanche  Rugged  Technology
Rugged  Gate  Oxide  Technology
Lower  Input  Capacitance
Improved  Gate  Charge
Extended  Safe  Operating  Area
Lower  Leakage  Current  :  25   A (Max.)  @  VDS = 600V
Lower  RDS(ON)  :  2.037    (Typ.)


Specifications

Symbol Characteristic Value Units
VDSS Drain-to-Source Voltage 600 V
ID Continuous Drain Current (TC=25 OC) 4 A
Continuous Drain Current (TC=100 OC) 2.5
IDM Drain Current-Pulsed 16 A
VGS Gate-to-Source Voltage +30 V
EAS Single Pulsed Avalanche Energy 262 mJ
IAR Avalanche Current 4 A
EAR Repetitive Avalanche Energy 10 mJ
dv/dt Peak Diode Recovery dv/dt 3.0 V/ns
PD Total Power Dissipation (TA=25 OC) 3.1 W
Total Power Dissipation (TC=25 OC)
Linear Derating Factor		 100
0.8		 W
W/OC
TJ , TSTG Operating Junction and Storage Temperature Range - 55 to +150 OC
TL Maximum Lead Temp. for Soldering Purposes, 1/8 " from case for 5-seconds 300



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