Features: • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes• Latch-Up Protected Over Entire Operating Range• High Peak Output Current: 14A Peak• Wide Operating Range: 4.5V to 25V• High Capacitive Load Drive Capability: 15nF in <30ns&...
I414YI: Features: • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes• Latch-Up Protected Over Entire Operating Range• High Peak Output Current: 14A Peak̶...
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Parameter | Value |
Supply Voltage | 25V |
All Other Pins | -0.3V to VCC + 0.3V |
Power Dissipation TCASE 85: TO220 (CI), TO263 (YI) TCASE 125: TO220 (CM), TO263 (YM) |
16W 16W |
Power Dissipation, TAMBIENT 25 8 Pin PDIP (PI) TO220 (CI, CM), TO263 (YI, YM) |
975mW 2W |
Power Dissipation, TAMBIENT 25 8 Pin PDIP (PI) TO220 (CI, CM), TO263 (YI, YM) |
7.6mW/ 0.1W/ |
Power Dissipation, TAMBIENT 25 8 Pin PDIP (PI) TO220 (CI, CM), TO263 (YI, YM) |
-65 to 150 |
Soldering Lead Temperature (10 seconds maximum) |
300 |
The I414YI is a high speed high current gate driver specifically designed to drive the largest MOSFETs and IGBTs to their minimum switching time and maximum practical frequency limits. The IXDI/N414 can source and sink 14A of peak current while producing voltage rise and fall times of less than 30ns to drive the latest IXYS MOSFETs & IGBTs. The input of the driver is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range. Designed with small internal delays, a patent-pending circuit virtually eliminates transistor cross conduction and current shootthrough. Improved speed and drive capabilities are further enhanced by very low, matched rise and fall times.
The I414YI is configured as a non-inverting gate driver and the IXDI414 is an inverting gate driver.
The I414YI family are available in standard 8 pin P-DIP (PI), 5-pin TO-220 (CI, CM) and TO-263 (YI, YM) surface-mount packages.