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I3N80A

Features: ` Avalanche Rugged Technology` Rugged Gate Oxide Technology` Lower Input Capacitance` Improved Gate Charge` Extended Safe Operating Area` Lower Leakage Current : 25 A (Max.) @ VDS = 800V` Low RDS(ON) :3.800 (Typ.)Specifications Symbol Characteristic Value Units VDSS Drai...

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SeekIC No. : 004370173 Detail

I3N80A: Features: ` Avalanche Rugged Technology` Rugged Gate Oxide Technology` Lower Input Capacitance` Improved Gate Charge` Extended Safe Operating Area` Lower Leakage Current : 25 A (Max.) @ VDS = 800V` ...

I3N80A Data Sheet

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Part Number:
I3N80A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/6

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Product Details

Description



Features:

` Avalanche Rugged Technology
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` Extended Safe Operating Area
` Lower Leakage Current : 25 A (Max.) @ VDS = 800V
` Low RDS(ON) : 3.800 (Typ.) 


Specifications

Symbol Characteristic
Value
Units
VDSS Drain-to-Source Voltage
800
V
ID Continuous Drain Current (TC=25 )
3
A
Continuous Drain Current (TC=100 )
1.9
IDM Drain Current-Pulsed                 
12
A
VGS Gate-to-Source Voltage
±30
V
EAS Single Pulsed Avalanche Energy     
240
mJ
IAR Avalanche rrent                               
3
A
EAR Repetitive Avalanche Energy           
10
mJ
dv/dt Peak Diode Recovery dv/dt              
2.0
V/ns
PD Total Power Dissipation (TA=25 )*
3.1
W
Total Power Dissipation (TA=25)
Linear Derating Factor
100
0.8
W
W/
TJ , TSTG Operating Junction and
Storage Temperature Range
- 55 to +150
TL Maximum Lead Temp. for Soldering
Purposes, 1/8 " from case for 5-seconds
300



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