HYM72V8035GS-50

Specifications

Operating temperature range ......................................................................................... 0 to + 70 °C
Storage temperature range...................................................................................... 55 to + 125 °C
Input/output voltage ............................................................................... -0.5 to min (Vcc+0.5, 4.6) V
Power supply voltage................................................................................................. 0.5V to 4.6 V
Power dissipation.................................................................................................................... 5,8 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.


Description

The HYM72V8035GS-50 is a 64 MByte DRAM module organized as 8 388 608 words by 72- bit in a 168-pin, dual read-out, single-in-line package comprising nine HYB3165805AJ/AT 8M x8 DRAMs in 400 mil wide SOJ or TSOPII - packages mounted together with ceramic decoupling capacitors on a PC board. All inputs except RAS and DQ are buffered by using BiCMOS buffers/ line drivers.

Each HYM72V8035GS-50 is described in the data sheet and is fully electrically tested and processed according to Siemens standard quality procedure prior to module assembly. After assembly onto the board, a further set of electrical tests is performed.

The density and speed of the HYM72V8035GS-50 module can be detected by the use of presence detect pins.