HYM72V1610GS-50

Operating temperature range .................................................................................... 0 to + 70 °C
Storage temperature range................................................................................ 55 to + 125 °C
Input/output voltage ............................................................................-0.5 to min (Vcc+0.5, 4.6) V
Power supply voltage........................................................................................... 1.0 V to + 4.6 V
Power dissipation.................................................................................................................... 8.3 W
Data out current (short circuit) ...............................................................................................50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

The HYM72V1610GS-50 is a 128 MByte DRAM module organized as 16 777 216 words by 72-bit in a 168-pin, dual read-out, single-in-line package comprising eighteen HYB 3164400BT/BJ 16M ´ 4 DRAMs in 500 mil wide TSOPII or SOJ- packages mounted together with eighteen 0.2 mF ceramic decoupling capacitors on a PC board. All inputs except RAS and DQ are buffered by using four BiCMOS 8-bit buffers/line drivers.

Each HYM72V1610GS-50 is described in the data sheet and is fully electrically tested and processed according to Siemens standard quality procedure prior to module assembly. After assembly onto the board, a further set of electrical tests is performed.

The density and speed of the HYM72V1610GS-50 module can be detected by the use of presence detect pins.