HYM72V1600GS-50

Operating temperature range .................................................................................... 0 to + 70 °C
Storage temperature range................................................................................ 55 to + 125 °C
Input/output voltage ............................................................................-0.5 to min (Vcc+0.5, 4.6) V
Power supply voltage........................................................................................... 1.0 V to + 4.6 V
Power dissipation.................................................................................................................... 8.3 W
Data out current (short circuit) ...............................................................................................50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

The HYM HYM72V1600GS-50 is a 128 MByte DRAM module organized as 16 777 216 words by 72-bit in a 168-pin, dual read-out, single-in-line package comprising eighteen HYB 3164400BT/BJ 16M ´ 4 DRAMs in 500 mil wide TSOPII or SOJ- packages mounted together with eighteen 0.2 mF ceramic decoupling capacitors on a PC board. All inputs except RAS and DQ are buffered by using four BiCMOS 8-bit buffers/line drivers.

Each HYB HYM72V1600GS-50 is described in the data sheet and is fully electrically tested and processed according to Siemens standard quality procedure prior to module assembly. After assembly onto the board, a further set of electrical tests is performed.

The density and speed of the HYM72V1600GS-50 module can be detected by the use of presence detect pins.