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HYE18P32160AC9.6

Features: • High density (1T1C-cell) Synchronous 32-Mbit Pseudo-Static RAM• Designed for cell phone applications (CellularRAM)• Functional-compatible (Asynchronous mode) to conventional low power asynchronous SRAM devices• Organization 2M * 16• Refresh-free operation&...

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HYE18P32160AC9.6: Features: • High density (1T1C-cell) Synchronous 32-Mbit Pseudo-Static RAM• Designed for cell phone applications (CellularRAM)• Functional-compatible (Asynchronous mode) to convent...

HYE18P32160AC9.6 Data Sheet

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Part Number:
HYE18P32160AC9.6
Supply Ability:
5000

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Product Details

Description



Features:

• High density (1T1C-cell) Synchronous 32-Mbit Pseudo-Static RAM
• Designed for cell phone applications (CellularRAM)
• Functional-compatible (Asynchronous mode) to conventional low power asynchronous SRAM devices
• Organization 2M * 16
• Refresh-free operation
• 1.8 V single power supply (VDD and VDDQ)
• Low power optimized design
ISTANDBY = 90 A (for L-part1)) or 120uA (for standard part), data retention mode
IDPD = < 25 A (32M), non-data retention mode
• Low power features (partly adopted from the JEDEC standardized low power SDRAM specifications)
Temperature Compensated Self-Refresh (TCSR)
Partial Array Self-Refresh (PASR)
Deep Power Down Mode (DPD)
• User configurable interface supporting three different access protocols (values from 9.6 part)
asynchronous SRAM protocol, 70 ns random access cycle time, 20 ns page mode (read only) cycle time
NOR-Flash burst protocol, 70 ns write cycle time, 104 MHz burst mode read cycle
synchronous (bi-directional) interface protocol, 70 ns random cycle time, 104 MHz burst mode read/write cycle
• In NOR-Flash burst or in synchronous mode the additional user settings are featured
programmable fixed burst length of 4/8/16 words or continuous burst mode
programmable latency modes to adjust the desired burst frequency
wrap mode function
programmable WAIT signal polarity and timing
• Byte read/write control by UB/LB (Asynchronous mode and in synchronous burst read)
• Synchronous Data Input Mask function supported by UB/LB in synchronous burst write mode
• Wireless operating temperature range from -25 °C to +85 °C
• P-VFBGA-54 chip-scale package (9 * 6 ball grid)


Specifications

Parameter
Symbol
Limit Values
Unit
Notes
Min.
Max.
Operating temperature range
TC
-25
+85
-
Storage temperature range
TSTG
-55
+150
-
Soldering peak temperature (10 s)
TSold
-
260
-
Voltage of VDD supply relative to VSS
VDD
-0.3
+2.45
V
-
Voltage of VDDQ supply relative to VSS
VDDQ
-0.3
+3.6
V
-
Voltage of any input relative to VSS
VIN
-0.3
+3.6
V
-
Power dissipation
PD
-
180
mW
-
Short circuit output current
IOUT
-50
+50
mA
-
Attention: Stresses above those listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit.


Description

The 32M Synchronous Burst CellularRAM (CellularRAM) of the HYE18P32160AC9.6  is designed to meet the growing memory density and bandwidth demand in 3G cellular phone designs. Its high density 1T1C-cell concept, the multi-protocol interface capabilities, its highly optimized low power design and its refresh-free operation make the CellularRAM the perfect fit for 3G baseband applications.

Configured of the HYE18P32160AC9.6 in synchronous burst mode, a peak bandwidth of > 200 Mbyte/s is achieved at the max. clock rate of 104 MHz. The burst length can be programmed and set to either fixed burst lengths of 4, 8- or 16-words1) or set to continuous mode. The 16-word burst mode is specially designed for cached processor designs to speed up cache re-fill operations.

In NOR-Flash, burst mode read accesses of the HYE18P32160AC9.6 are synchronous whereas write accesses are of asynchronous nature. This is to retain compatibility to today's NOR-Flash protocols and thus to make sure that existing baseband designs do get instantly a performance gain in read direction by deploying the NOR-Flash burst protocol. The different access protocols that are supported by the CellularRAM are illustrated in Figure 1. Data byte control (UB, LB) is featured in all modes and provides dedicated lower and upper byte access.




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