HYB514400BJ

The HYB514400BJ is the new generation dynamic RAM organized as 1048576 words by 4-bit. The HYB514400BJ utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margins, both internally and for the system user.

The following is about the absolute maximum ratings of HYB514400BJ: (1)operating temperature range: 0 to 70; (2)storage temperature range: -55 to 150; (3)soldering temperature: 260; (4)soldering time: 10s; (5)input/output voltage: -1 to +7V; (6)power supply voltage: -1 to +7V; (7)data out current: 50mA.

The electrical characteristics of the HYB514400BJ are: (1)input high voltage: 2.4V min and 6.5V max; (2)input low voltage: -1.0V min and 0.8V max; (3)output high voltage(IOUT=-5mA): 2.4V min; (4)output low voltage(IOUT=4.2mA): 0.4V max; (5)input leakage current, any input(0V<Vin<7, all other input=0V): -10A min and 10A max; (6)output leakage current, (DO is disabled, 0V<VOUT<VCC): -10A min and 10A max; (7)standby VCC supply current(RAS=CAS=Vin): 2mA max.