HYB4125610

The HYB4125610 belongs to the HYB41256 family which is a 262,144 word by 1-bit dynamic random access memory. This 5V-only component is fabricated with Siemens high-performance N-channel silicon gate technology. The use of tantalum polycide provides high speed. A low radiation molding compound protects the chip against soft errors. Nine multiplexed address inputs permit the HYB41256 to be packaged in an industry standard 16-pin dual-in-line package. Systemoriented features include single power supply with +-10 % tolerance, on-chip address and data registers which eliminate the need for interface registers, and fully TTL-compatible inputs and output, including clocks. In addition to the usual read, write and read-modify-write cycles, the HYB 41256 is capable of early and late write cycles, HE-only refresh, and hidden refresh. Common I/O capability is given by using early write operation. The HYB41256 also features page made which allows high-speed random access of bits in the same row. The HYB4125610 has the capability of using laser links to perform redundancy.

The features of HYB4125610 can be summarized as (1)262,144×1-bit organization; (2)industry standard 16 pins; (3)single +5 supply, ±10 % tolerance; (4)low power dissipation: 358 mW active; 28 mW standby; (5)100 ns access time, 200 ns cycle time (HYB 41256-10), 120 ns access time, 220 ns cycle time (HYB 41256-12), 150 ns access time, 260 ns cycle time (HYB 41256-15); (6)All inputs and cutputs TTL-compatible; (7)on-chip substrate bias generator; (8)tristate data output; (9)read, write, read-modify-write, RTS-only refresh, hidden-refresh; (10)common I/O capability usin "early write" operation; (11)page made read and write, read-write; (12)256 refresh cycles with 4 ms refresh period; (13)redundancy incorporated lor increasing yield - activation via laser links.

The absolute maximum ratings of HYB4125610 are (1)operating temperature range: 0 to +70°C; (2)storage temperature range - 65 to +150°C; (3)voltage on any pin relative to Vss -1 to 7 ; (4)power dissipation: 1W; (5)data output current (short circuit): 50 mA.