Pinout
SpecificationsOperating temperature range .........................................................................................0 to + 70 °C
Storage temperature range...................................................................................... 55 to + 150 °C
Input/output voltage ............................................................................................. 0.3 to Vdd+0.3 V
Power supply voltage VDD / VDDQ............................................................................. 0.3 to + 4.6 V
Power Dissipation............................................. ............................................................................1 W
Data out current (short circuit) ................................................................................................. 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.DescriptionThe HYB39S64800AT are four bank Synchronous DRAM's organized as 4 banks x 4MBit x4, 4 banks x 2MBit x8 and 4 banks x 1Mbit x16 respectively. These synchronous devices achieve high speed data transfer rates by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock. The chip is fabricated with SIEMENS' advanced quarter micron 64MBit DRAM process technology.
The device HYB39S64800AT is designed to comply with all JEDEC standards set for synchronous DRAM products, both electrically and mechanically. All of the control, address, data input and output circuits are synchronized with the positive edge of an externally supplied clock.
Operating the four memory banks in an interleave fashion allows random access operation to occur at higher rate than is possible with standard DRAMs. A sequential and gapless data rate is possible depending on burst length, CAS latency and speed grade of the device HYB39S64800AT.
Auto Refresh (CBR) and Self Refresh operation are supported. These devices HYB39S64800AT operates with a single 3.3V +/- 0.3V power supply and are available in TSOPII packages.
The -8 version of this product HYB39S64800AT is best suited for use on a 100 Mhz bus for both CAS latencies 2 & 3.
HYB39S64800AT Data Sheet
