HYB39S16400AT-10

Pinout




Specifications

Operating temperature range ........................................................................................ 0 to + 70 °C
Storage temperature range..................................................................................... 55 to + 150 °C
Input/output voltage .......................................................................... 0.5 to min (VCC + 0.5, 4.6) V
Power supply voltage VDD / VDDQ............................................................................. 1.0 to + 4.6 V
Power Dissipation ........................................................................................................................ 1 W
Data out current (short circuit) ................................................................................................. 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.


Description

The HYB39S16400AT-10 are dual bank Synchronous DRAM's based on the die revisions "B" and "C" and organized as 2 banks ´ 2 MBit ´ 4, 2 banks ´ 1 MBit ´ 8 and 2 banks ´ 512 kBit ´ 16 respectively. These synchronous devices achieve high speed data transfer rates up to 125 MHz by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock. The chip is fabricated with SIEMENS advanced 16 MBit DRAM process technology.

The device HYB39S16400AT-10 is designed to comply with all JEDEC standards set for synchronous DRAM products, both electrically and mechanically. All of the control, address, data input and output circuits are synchronized with the positive edge of an externally supplied clock.

Operating the two memory banks in an interleaved fashion allows random access operation to occur at higher rate than is possible with standard DRAMs. A sequential and gapless data rate of up to 125 MHz is possible depending on burst length, CAS latency and speed grade of the device HYB39S16400AT-10.

Auto Refresh (CBR) and Self Refresh operation are supported. These devices HYB39S16400AT-10 operate with a single 3.3 V ± 0.3 V power supply and are available in TSOPII packages.