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HYB39L256160ACT

Features: • 16Mbit x16 organisation• VDD = VDDQ = 3.3 V• Fully Synchronous to Positive Clock Edge• Four Banks controlled by BA0 & BA1• ProgrammableCAS Latency: 2, 3• Programmable Wrap Sequence: Sequential or Interleave• Automatic and Controlled Prechar...

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SeekIC No. : 004368970 Detail

HYB39L256160ACT: Features: • 16Mbit x16 organisation• VDD = VDDQ = 3.3 V• Fully Synchronous to Positive Clock Edge• Four Banks controlled by BA0 & BA1• ProgrammableCAS Latency: 2, 3...

HYB39L256160ACT Data Sheet

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Part Number:
HYB39L256160ACT
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 16Mbit x16 organisation
• VDD = VDDQ = 3.3 V
• Fully Synchronous to Positive Clock Edge
• Four Banks controlled by BA0 & BA1
• Programmable CAS Latency: 2, 3
• Programmable Wrap Sequence: Sequential or Interleave
• Automatic and Controlled Precharge Command
• Programmable Burst Length: 1, 2, 4, 8 and full page
• Data Mask for byte control
• Auto Refresh (CBR)
• 8192 Refresh Cycles / 64ms
• Very low Self Refresh current
• Power Down and Clock Suspend Mode
• Random Column Address every CLK (1-N Rule)
• P-TFBGA-54, with 9 x 6 ball array with 3 depopulated rows, 12 x 8 mm2
• P-TSOPII-54 alternate package
• Operating Temperature Range Commerical (00 to 700C)


Pinout

Connection Diagram


Specifications

Operating Case Temperature Range (commercial) ....................................................... 0 to +70
Storage Temperature Range .................................................................................55 to +150
Input/Output Voltage VIN, VOUT ..................................................................... 1.0 to VDD + 0.5V
Input/Output Voltage VIN, VOUT ............................................................................. 1.0 to +4.6V
Power Supply Voltages VDD, VDDQ ...........................................................................1.0 to +4.6V
Power Dissipation ................................................................................................................. 0.7W
Data out Current (short circuit) ............................................................................................ 50mA

Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.


Description

The HYB39L256160ACT Mobile-RAM is a new generation of low power, four bank Synchronous DRAM's organized as 4 banks x 4Mbit x 16. These synchronous Mobile-RAMs achieve high speed data transfer rates by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock.

All of the HYB39L256160ACT control, address, data input and output circuits are synchronized with the positive edge of an externally supplied clock.

Operating the four memory banks in an interleave fashion allows random access operation to occur at higher rate. A sequential and gapless data rate is possible depending on burst length,CAS latency and speed grade of the device HYB39L256160ACT.

Auto Refresh (CBR) and Self Refresh operation are supported. The device HYB39L256160ACT operates with a single 3.3V ±0.3V power supply.

Compared to conventional SDRAM HYB39L256160ACT the self-refresh current is further reduced. The Mobile-RAM devices are available in FBGA "chip-size" or TSOPII packages.




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