HYB3165165T-50

This HYB3165165T-50 is a 64 MBit dynamic RAM organized 4 194 304 x 16 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. The HYB3164(5)165 operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB3164(5)165 to be packaged in a 500mil wide TSOPII-54 plastic package. These packages HYB3165165T-50 provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment.The HYB3164(5)165TL parts have a very low power „sleep mode" supported by Self Refresh.