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HYB3165160T-50

Features: • 4 194 304 words by 16-bit organization• 0 to 70 °C operating temperature• Fast access and cycle timeRAS access time: 50 ns (-50 version) 60 ns (-60 version) Cycle time: 90 ns (-50 version) 110 ns (-60 version)CAS access time: 13 ns ( -50 version)15 ns ( -60 version)&#...

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SeekIC No. : 004368959 Detail

HYB3165160T-50: Features: • 4 194 304 words by 16-bit organization• 0 to 70 °C operating temperature• Fast access and cycle timeRAS access time: 50 ns (-50 version) 60 ns (-60 version) Cycle time:...

HYB3165160T-50 Data Sheet

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Part Number:
HYB3165160T-50
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• 4 194 304 words by 16-bit organization
• 0 to 70 °C operating temperature
• Fast access and cycle time
    RAS access time:
    50 ns (-50 version)
    60 ns (-60 version)
    Cycle time:
    90 ns (-50 version)
    110 ns (-60 version)
    CAS access time:
    13 ns ( -50 version)
    15 ns ( -60 version)
• Fast page mode cycle time
    35 ns (-50 version)
     40 ns (-60 version)
• Single + 3.3 V (± 0.3V) power supply
• Low power dissipation
    max. 396 active mW ( HYB 3164160T-50)
    max. 360 active mW ( HYB 3164160T-60)
    max. 504 active mW ( HYB 3165160T-50)
    max. 432 active mW ( HYB 3165160T-60)
    7.2 mW standby (TTL)
    720 W standby (MOS)
• Read, write, read-modify-write, CAS-before-RAS refresh (CBR), RAS-only refresh, hidden refresh and self refresh modes
• Fast page mode capability
• 2 CAS / 1 WRITE byte control
• 8192 refresh cycles/128 ms , 13 R/ 9C addresses (HYB 3164160T)
• 4096 refresh cycles/ 64 ms , 12 R/ 10C addresses (HYB 3165160T)
• Plastic Package: P-TSOPII-54-1 500 mil


Pinout

Connection Diagram


Specifications

Operating temperature range.......................................................0 to 70 °C
Storage temperature range.................................................. 55 to 150 °C
Input/output voltage...........................................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage...............................................................-0.5V to 4.6 V
Power dissipation..................................................................................1.0 W
Data out current (short circuit).......................................................... ..50 mA
Note
Stresses above those listed under „Absolute Maximum Ratings" may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may effect device reliability.


Description

This device HYB3165160T-50 is a 64 MBit dynamic RAM organized 4 194 304 by 16 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. This DRAM operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB 3164(5)160T to be packaged in a 500 mil wide TSOP-54 plastic package. These HYB3165160T-50 packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment.




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