HYB3164800AT

Operating temperature range......................................0 to 70
Storage temperature range................................ 55 to 150
Input/output voltage.......................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage..........................................-0.5V to 4.6 V
Power dissipation.............................................................1.0 W
Data out current (short circuit)........................................50 mA
Note
Stresses above those listed under „Absolute Maximum Ratings" may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may effect device
reliability.

This HYB3164800AT device is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated in an advanced second generation 64Mbit 0,35 mm CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. This DRAM operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB 3164(5)800AJ/AT to be packaged in a 400mil wide SOJ-32 or TSOP-32 plastic package. These HYB3164800AT packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment. The HYB3164(5)800ATL parts (L-versions) have a very low power „sleep mode" supported by Self Refresh