HYB3164400J

Pinout




Specifications

Operating temperature range..............................0 to 70 ⁰C
Storage temperature range......................... 55 to 150 ⁰C
Input/output voltage..................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage.....................................-0.5V to 4.6 V
Power dissipation........................................................1.0 W
Data out current (short circuit)...................................50 mA


Description

This device HYB3164400J is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. This DRAM operates with a single 3.3 +/-0.3V power supply  and interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB 3164(5)400J/T to be packaged in a 500mil wide SOJ-34 or TSOP-34 plastic package. These packages HYB3164400J provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment.