HYB3164400AT60

Pinout




Specifications

Operating temperature range..............................................................................................0 to 70 °C
Storage temperature range......................................................................................... 55 to 150 °C
Input/output voltage.................................................................................. -0.5 to min (Vcc+0.5,4.6) V
Power supply voltage....................................................................................................  -0.5V to 4.6 V
Power dissipation.......................................................................................................................  1.0 W
Data out current (short circuit).....................................................................................................50 mA


Description

This device HYB3164400AT60 is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated on an advanced second generation 64Mbit 0,35 µm-CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. This DRAM operates with a single 3.3 +/-0.3V power supply   and  interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB 3164(5)400AJ/AT to be packaged in a 400mil wide SOJ-32 or TSOP-32 plastic package. These packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment. The HYB3164400AT60 parts (L-versions) have a very low power „sleep mode" supported by Self Refresh.