HYB3164165AT-40

Operating temperature range..................0 to 70
Storage temperature range.............. 55 to 150
Input/output voltage......-0.5 to min (V_cc+0.5,4.6) V
Power supply voltage.........................-0.5V to 4.6 V
Power dissipation............................................1.3 W
Data out current (short circuit).......................50 mA

Note
Stresses above those listed under „Absolute Maximum Ratings" may cause permanent damage of
the device. Exposure to absolute maximum rating conditions for extended periods may effect device
reliability.

This device is a 64 MBit dynamic RAM HYB3164165AT-40 organized 4 194 304 x 16 bits. The device is fabricated on an advanced first generation 64Mbit 0,35 mm CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. The HYB3164(5)165AT operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB3164(5/6)165AT to be packaged in 400mil wide TSOPII-50 package. These HYB3164165AT-40 packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment. The HYB3164(5/6)165ATL parts have a very low power „sleep mode" supported by Self Refresh.