Features: • 1 048 576 words by 4-bit organization• 0 to 70 operating temperature• Hyper Page Mode - EDO• Performance:• Single + 3.3 V (± 0.3 V) supply• Low power dissipation max. 252 mW active (-50 version) max. 216 mW active (-60 version) max. 198 mW active (-7...
HYB314405BJ: Features: • 1 048 576 words by 4-bit organization• 0 to 70 operating temperature• Hyper Page Mode - EDO• Performance:• Single + 3.3 V (± 0.3 V) supply• Low power ...
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Features: • 1 048 576 words by 16-bit organization• 0 to 70 °C operating temperature...
Features: • 1 048 576 words by 16-bit organization• 0 to 70 °C operating temperature...
Features: • 1 048 576 words by 16-bit organization• 0 to 70 °C operating temperature...
Operating temperature range | 0 to + 70 |
Storage temperature range | 55 to + 150 |
Input/output voltage | 1 to 4.6 V |
Power supply voltage | 1 to + 4.6 V |
Data out current (short circuit) | 50 mA |
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
The HYB314405BJ is the new generation dynamic RAM organized as 1 048 576 words by 4-bit. The HYB 314405BJ/BJL utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margins, both internally and for the system user. Multiplexed address inputs permit the HYB 314405BJ/BJL to be packed in a standard plastic P-SOJ-26/20 package. This HYB314405BJ package size provides high system bit densities and is compatible with commonly used automatic testing and insertion equipment. System oriented features include single + 3.3 V (± 0.3 V) power supply, direct interfacing with high performance logic device families.