HYB3118160BST-70

Operating temperature range .....................................................................................0 to 70
Storage temperature range................................................................................... 55 to 150
Soldering time.......................................................................................................................10 s
Input/output voltage ........................................................................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage...........................................................................................-0.5 V to 4.6 V
Power dissipation.............................................................................................................. 1.0 W
Data out current (short circuit) ......................................................................................... 50 mA
Note:
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

The HYB3118160BST-70 is a 16 MBit dynamic RAM organized as 1 048 576 words by 16 bits. The HYB 3116(8)160BSJ/BST utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB 3116(8)160BSJ/BST to be packaged in standard SOJ-42 and TSOPII-50/44 plastic package with 400mil width. These packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment. System-oriented features include single + 3.3 V (± 0.3 V) power supply, direct interfacing with highperformance logic device families.The HYB3118160BST-70 parts have a very low power „sleep mode" suppported by Self Refresh.