Features: • 2 097 152 words by 8-bit organization• 0 to 70 °C operating temperature• Performance• Single + 3.3 V (± 0.3 V) supply• Low power dissipationmax. 432 mW active (-50 version)max. 396 mW active (-60 version)max. 360 mW active (-70 version)7.2 mW standby (LV-T...
HYB3117805BSJ -60: Features: • 2 097 152 words by 8-bit organization• 0 to 70 °C operating temperature• Performance• Single + 3.3 V (± 0.3 V) supply• Low power dissipationmax. 432 mW acti...
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Features: • 1 048 576 words by 16-bit organization• 0 to 70 °C operating temperature...
Features: • 1 048 576 words by 16-bit organization• 0 to 70 °C operating temperature...
Features: • 1 048 576 words by 16-bit organization• 0 to 70 °C operating temperature...
• 2 097 152 words by 8-bit organization
• 0 to 70 °C operating temperature
• Performance
• Single + 3.3 V (± 0.3 V) supply
• Low power dissipation
max. 432 mW active (-50 version)
max. 396 mW active (-60 version)
max. 360 mW active (-70 version)
7.2 mW standby (LV-TTL)
3.6 mW standby (CMOS)
• Read, write, read-modify-write, CAS-before-RAS refresh,RAS-only refresh, hidden refresh, self refresh and test mode
• Hyper page mode (EDO) capability
• All inputs, outputs and clocks fully TTL-compatible
• 2048 refresh cycles / 32 ms (2k-Refresh)
• Plastic Package: P-SOJ-28-3 400 mil
Absolute Maximum Ratings
Operating temperature range .........................................................................................0 to 70 °C
Storage temperature range...................................................................................... 55 to 150 °C
Input/output voltage ...............................................................................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage...................................................................................................-1.0V to 4.6 V
Power dissipation.................................................................................................................... 0.5 W
Data out current (short circuit) ............................................................................................... 50 mA
Note:
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
The HYB3117805BSJ -60 is a 16 MBit dynamic RAM organized as 2 097 152 words by 8-bits. The HYB 3117805BSJ utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB3117805BSJ -60 to be packaged in a standard SOJ 28 plastic package with 400 mil width. These packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment. System-oriented features include single + 3.3 V (± 0.3 V) power supply, direct interfacing with high-performance logic device families such as Schottky TTL.