Features: • 4 banks * 4 Mbit * 32 organization (dual-die)• Fully synchronous to positive clock edge• Four internal banks for concurrent operation• Programmable CAS latency: 2, 3• Programmable burst length: 1, 2, 4, 8 or full page• Programmable wrap sequence: seq...
HYB18L512320BF-7.5: Features: • 4 banks * 4 Mbit * 32 organization (dual-die)• Fully synchronous to positive clock edge• Four internal banks for concurrent operation• Programmable CAS latency: 2...
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Parameter |
Symbol |
Values |
Unit | ||
Min. |
Max. | ||||
Power Supply Voltage |
VDD |
-0.3 |
2.7 |
V | |
Power Supply Voltage for Output Buffer |
VDDQ |
-0.3 |
2.7 |
V | |
Input Voltage |
VIN |
-0.3 |
VDDQ + 0.3 |
V | |
Output Voltage |
VOUT |
-0.3 |
VDDQ + 0.3 |
V | |
Operation Case Temperature |
Commercial |
TC |
0 |
+70 |
°C |
Extended |
-25 |
+85 |
°C | ||
Storage Temperature |
TSTG |
-55 |
+150 |
°C | |
Power Dissipation |
PD |
1.0 |
W | ||
Short Circuit Output Current |
IOUT |
50 |
mA |
Attention: Stresses above those listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit.