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HY63V8400

Features: ` Single 3.3V±0.3V Power Supply` Fully static operation and Tri-state output` TTL compatible inputs and outputs` Low data Retention Voltage:- 2.0V(min) L-ver. Only` Center Power/Ground Pin Configuration` Standard pin configuration- 36pin 400mil SOJ- 44pin 400mil TSOP-llPinoutSpecificatio...

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SeekIC No. : 004368398 Detail

HY63V8400: Features: ` Single 3.3V±0.3V Power Supply` Fully static operation and Tri-state output` TTL compatible inputs and outputs` Low data Retention Voltage:- 2.0V(min) L-ver. Only` Center Power/Ground Pin...

HY63V8400 Data Sheet

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Part Number:
HY63V8400
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` Single 3.3V±0.3V Power Supply
` Fully static operation and Tri-state output
` TTL compatible inputs and outputs
` Low data Retention Voltage:
- 2.0V(min) L-ver. Only
` Center Power/Ground Pin Configuration
` Standard pin configuration
- 36pin 400mil SOJ
- 44pin 400mil TSOP-ll


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Rating
Unit
VIN, VOUT
 Voltage on Any Pin Relative to Vss
-0.5 to 4.6
V
Vcc
 Voltage on Vcc Supply Relative to Vss
-0.5 to 5.5
V
TA
 Operating Temperature Commercial
0 to 70
°C
Industrial
-40 to 85
TSTG
 Storage Temperature
-65 to 150
°C
PD
 Power Dissipation
1.0
W
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational of this specification is not implied.
Exposure to absolute maximum rating conditions for extended period may affect reliability.


Description

The HY63V8400 is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8-bits. The HY63V8400 uses eight common input and output lines and has an output enable pin which operates faster than. address access time at read cycle. The device is fabricated using Hyundai's advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications




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