Features: · Fully static operation and Tri-state output· TTL compatible inputs and outputs· Low power consumption· Battery backup(LL-part) - 2.0V(min.) data retention· Standard pin configuration - 28 pin 600mil PDIP -28 pin 330mil SOP- 28 pin 8x13.4 mm TSOP-I (Standard)PinoutSpecifications ...
HY62WT08081E: Features: · Fully static operation and Tri-state output· TTL compatible inputs and outputs· Low power consumption· Battery backup(LL-part) - 2.0V(min.) data retention· Standard pin configuration - 2...
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Features: ·Fully static operation andTri-state outputs ·TTL compatible inputsand outputs ·Low powe...
Symbol |
Parameter |
Rating |
Unit | |
Vcc, VIN, VOUT |
Power Supply, Input/Output Voltage | 4.5~5.5V |
-0.3 to 7.0 |
V |
2.7~3.6V |
-0.3 to 4.6 |
V | ||
TA |
Operating Temperature | HY62WT08081E-C |
0 to 70 |
°C |
HY62WT08081E-E |
-25 to 85 |
°C | ||
HY62WT08081E-I |
-40 to 85 |
°C | ||
TSTG |
Storage Temperature |
-65 to 150 |
°C | |
PD |
Power Dissipation |
1.0 |
W | |
IOUT |
Data Output Current |
50 |
mA | |
TSOLDER |
Lead Soldering Temperature & Time |
260 ·10 |
°C·sec |
The HY62WT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynix's high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt.