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HY62V8200B

Features: Fully static operation and Tri-state outputTTL compatible inputs and outputsBattery backup( LL-part )-. 2.0V(min) data retentionStandard pin configuration-. 32-sTSOPI-8X13.4, 32-TSOPI -8X20(Standard and Reversed)PinoutSpecifications Symbol Parameter Rating Unit Remark...

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SeekIC No. : 004368394 Detail

HY62V8200B: Features: Fully static operation and Tri-state outputTTL compatible inputs and outputsBattery backup( LL-part )-. 2.0V(min) data retentionStandard pin configuration-. 32-sTSOPI-8X13.4, 32-TSOPI -8X2...

HY62V8200B Data Sheet

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Part Number:
HY62V8200B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/8/14

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Product Details

Description



Features:

Fully static operation and Tri-state output
TTL compatible inputs and outputs
Battery backup( LL-part )
-. 2.0V(min) data retention
Standard pin configuration
-. 32-sTSOPI-8X13.4, 32-TSOPI -8X20
(Standard and Reversed)


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Rating
Unit
Remark
VIN, VOUT
 Input/Output Voltage
-0.2 to 3.9
V
Vcc
 Power Supply
-0.2 to 4.0
V
TA
 Operating Temperature
0 to 70
°C
HY62V8200B
-20 to 85
°C
HY62V8200B-E
-40 to 85
HY62V8200B-I
TSTG
 Storage Temperature
-55 to 150
°C
PD
 Power Dissipation
1.0
W
IOUT
 Data Output Current
50
mA
  
TSOLDER
 Ball Soldering Temperature & Time
260 ·10
°C·sec
  
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.


Description

The HY62V8200B is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. It uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particularly well suited for used in high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 2.0V.




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