Features: · Fully static operation and Tri-state output· TTL compatible inputs and outputs· Battery backup-. 1.2V(min) data retention· Standard pin configuration-. 32 - sTSOP - 8X13.4(Standard)PinoutSpecifications Symbol Parameter Rating Unit Remark VIN, VOUT Input/Output...
HY62UF08401C: Features: · Fully static operation and Tri-state output· TTL compatible inputs and outputs· Battery backup-. 1.2V(min) data retention· Standard pin configuration-. 32 - sTSOP - 8X13.4(Standard)Pinou...
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Features: ·Fully static operation andTri-state outputs ·TTL compatible inputsand outputs ·Low powe...
Symbol |
Parameter |
Rating |
Unit |
Remark |
VIN, VOUT |
Input/Output Voltage |
-0.3 to 3.6 |
V |
|
Vcc |
Power Supply |
-0.3 to 4.6 |
V |
|
TA |
Operating Temperature |
-40 to 85 |
°C |
HY62UF08401C-I |
TSTG |
Storage Temperature |
-55 to 150 |
°C |
|
PD |
Power Dissipation |
1.0 |
W |
|
TSOLDER |
Ball Soldering Temperature & Time |
260 ·10 |
°C·sec |
The HY62UF08401C is a high speed, super low power and 4Mbit full CMOS SRAM organized as 512K words by 8bits. It uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V.