HY62U8200B

Features: · Fully static operation and Tri-state output· TTL compatible inputs and outputs· Battery backup( LL-part ) -. 2.0V(min) data retention· Standard pin configuration -. 32-sTSOPI-8X13.4, 32-TSOPI -8X20 (Standard and Reversed)PinoutSpecifications Symbol Parameter Rating Unit ...

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HY62U8200B Picture
SeekIC No. : 004368388 Detail

HY62U8200B: Features: · Fully static operation and Tri-state output· TTL compatible inputs and outputs· Battery backup( LL-part ) -. 2.0V(min) data retention· Standard pin configuration -. 32-sTSOPI-8X13.4, 32-...

floor Price/Ceiling Price

Part Number:
HY62U8200B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/8/14

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Product Details

Description



Features:

·  Fully static operation and Tri-state output
·  TTL compatible inputs and outputs
·  Battery backup( LL-part )
  -. 2.0V(min) data retention
·  Standard pin configuration
  -. 32-sTSOPI-8X13.4, 32-TSOPI -8X20 (Standard and Reversed)



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Rating
Unit
Remark
VIN, VOUT
Voltage on any pin relative to Vss
-0.2 to 3.9
V
VCC
Voltage on Vcc supply relative to
Vss
-0.2 to 4.0
V
TA
Operating Temperature
0 to 70
°C
HY62U8200B
 
-25 to 85
°C
HY62U8200B-E
 
-40 to 85
°C
HY62U8200B-I
TSTG
Storage Temperature
-55 to 150
°C
PD
Power Dissipation
1.0
W
IOUT
Data Output Current
50
mA
TSOLDER
Lead Soldering Temperature & Time
260 · 5
°C·sec
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect reliability.



Description

The HY62U8200B is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. It uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particularly well suited for used in high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 2.0V.




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