Features: · Fully static operation and Tri-state output· TTL compatible inputs and outputs· Battery backup(LL-part)-. 2.0V(min) data retention· Standard pin configuration-. 32 - SOP - 525mil-. 32 - TSOP-I - 8X20(Standard and Reversed)-. 32 - sTSOP-I - 8X13.4(Standard and Reversed)PinoutSpecificati...
HY62U8100B: Features: · Fully static operation and Tri-state output· TTL compatible inputs and outputs· Battery backup(LL-part)-. 2.0V(min) data retention· Standard pin configuration-. 32 - SOP - 525mil-. 32 - ...
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Features: ·Fully static operation andTri-state outputs ·TTL compatible inputsand outputs ·Low powe...
Parameter | Symbol | Rating | Unit | Remark |
Power Supply, Input/Output Voltage Operating Temperature Storage Temperature Power Dissipation Data Output Current Lead Soldering Temperature & Time |
Vcc, VIN, VOUT TA TSTG PD IOUT TSOLDER |
-0.3 to 4.6 0 to 70 -25 to 85 -40 to 85 -65 to 125 10 50 260 · 10 |
V °C °C °C °C W mA °C·sec |
HY62U8100B HY62U8100B-E HY62U8100B-I |
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect reliability.
The HY62U8100B is a high speed, low power and 1M bit CMOS SRAM organized as 131,072 words by 8bit. It uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 2.0V.