HY62U8100B

Features: · Fully static operation and Tri-state output· TTL compatible inputs and outputs· Battery backup(LL-part)-. 2.0V(min) data retention· Standard pin configuration-. 32 - SOP - 525mil-. 32 - TSOP-I - 8X20(Standard and Reversed)-. 32 - sTSOP-I - 8X13.4(Standard and Reversed)PinoutSpecificati...

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HY62U8100B Picture
SeekIC No. : 004368387 Detail

HY62U8100B: Features: · Fully static operation and Tri-state output· TTL compatible inputs and outputs· Battery backup(LL-part)-. 2.0V(min) data retention· Standard pin configuration-. 32 - SOP - 525mil-. 32 - ...

floor Price/Ceiling Price

Part Number:
HY62U8100B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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evaluate  (4.8 stars)

Upload time: 2024/10/30

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Product Details

Description



Features:

· Fully static operation and Tri-state output
· TTL compatible inputs and outputs
· Battery backup(LL-part)
-. 2.0V(min) data retention
· Standard pin configuration
-. 32 - SOP - 525mil
-. 32 - TSOP-I - 8X20(Standard and Reversed)
-. 32 - sTSOP-I - 8X13.4
(Standard and Reversed)



Pinout

  Connection Diagram


Specifications

Parameter Symbol Rating Unit Remark
Power Supply, Input/Output Voltage
Operating Temperature


Storage Temperature
Power Dissipation
Data Output Current
Lead Soldering Temperature & Time
Vcc, VIN, VOUT
TA


TSTG
PD
IOUT
TSOLDER
-0.3 to 4.6
0 to 70
-25 to 85
-40 to 85
-65 to 125
10
50
260 · 10
V
°C
°C
°C
°C
W
mA
°C·sec
HY62U8100B
HY62U8100B-E
HY62U8100B-I



Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect reliability.




Description

The HY62U8100B is a high speed, low power and 1M bit CMOS SRAM organized as 131,072 words by 8bit. It uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 2.0V.




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