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HY62SF16806B

Features: ·Fully static operation and Tri-state output·TTL compatible inputs and outputs·Battery backup(LL/SL-part) - 1.2V(min) data retention ·Standard pin configuration- 48-FBGA Specifications Symbol Parameter Rating Unit Remark V IN, VOUT Input/Output Voltage -0.3 t...

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SeekIC No. : 004368386 Detail

HY62SF16806B: Features: ·Fully static operation and Tri-state output·TTL compatible inputs and outputs·Battery backup(LL/SL-part) - 1.2V(min) data retention ·Standard pin configuration- 48-FBGA Specifications ...

HY62SF16806B Data Sheet

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Part Number:
HY62SF16806B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Description



Features:

·Fully static operation and Tri-state output  
·TTL compatible inputs and outputs  
·Battery backup(LL/SL-part)       
  - 1.2V(min) data retention           
·Standard pin configuration 
  - 48-FBGA 
  


Specifications

Symbol Parameter
Rating
Unit
Remark
V IN, VOUT Input/Output Voltage
-0.3 to Vcc+0.3
V
Vcc Power Supply
-0.3 to 2.6
V
TA Operating Temperature
0 to 70


HY62SF16806B-C
-40 to 85

HY62SF16806B-I
TSTG Storage Temperature
-55 to 150

PD Power Dissipation
1.0
W
TSOLDER Ball Soldering Temperatur& Time
260` 10
`sec



Description

The HY62SF16806B is a high speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 6bits. The  HY62SF16806B uses high performance full CMOS process technology and is designed for high speed and low ower circuit technology. It is particularly well-suited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V.    




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