Features: ·Fully static operation and Tri-state output·TTL compatible inputs and outputs· Battery backup(LL/SL-part)- 1.2V(min) data retention·Standard pin configuration - 48-uBGAPinoutSpecifications Symbol Parameter Rating Unit Remark VIN, VOUT Input/Output Voltage -0.2 to...
HY62SF16804A: Features: ·Fully static operation and Tri-state output·TTL compatible inputs and outputs· Battery backup(LL/SL-part)- 1.2V(min) data retention·Standard pin configuration - 48-uBGAPinoutSpecification...
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Features: ·Fully static operation andTri-state outputs ·TTL compatible inputsand outputs ·Low powe...
· Fully static operation and Tri-state output
· TTL compatible inputs and outputs
· Battery backup(LL/SL-part)
- 1.2V(min) data retention
· Standard pin configuration
- 48-uBGA
Symbol |
Parameter |
Rating |
Unit |
Remark |
VIN, VOUT | Input/Output Voltage | -0.2 to 3.6 |
V |
|
Vcc | Power Supply | -0.2 to 4.6 |
V |
|
TA | Operating Temperature | 0 to 70 | HY62SF16804A-C | |
-40 to 85 |
HY62SF16804A-I | |||
TSTG | Storage Temperature | -55 to 150 | ||
PD | Power Dissipation | 1.0 |
W |
|
TSOLDER | Ball Soldering Temperature &Time | 260`10 |
`sec |
The HY62SF16804A is a high speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 16bits. It uses high performance full CMOS process
technology and is designed for high speed and low power circuit technology. HY62SF16804A is particularly wellsuited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V.