Features: · Fully static operation and Tri-state output· TTL compatible inputs and outputs· Battery backup(LL/SL-part)-. 1.2V(min) data retention· Standard pin configuration-. 48 - FBGASpecifications Symbol Parameter Rating Unit Remark VIN, VOUT Input/Output Voltage -0...
HY62SF16101C: Features: · Fully static operation and Tri-state output· TTL compatible inputs and outputs· Battery backup(LL/SL-part)-. 1.2V(min) data retention· Standard pin configuration-. 48 - FBGASpecification...
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Features: ·Fully static operation andTri-state outputs ·TTL compatible inputsand outputs ·Low powe...
Symbol |
Parameter |
Rating |
Unit |
Remark |
VIN, VOUT |
Input/Output Voltage |
-0.2 to 3.6 |
V |
|
Vcc |
Power Supply |
-0.2 to 4.6 |
V |
|
TA |
Operating Temperature |
0 to 70 |
°C |
HY62SF16101C |
-40 to 85 |
°C |
HY62SF16101C-I | ||
TSTG |
Storage Temperature |
-55 to 150 |
°C |
|
PD |
Power Dissipation |
1.0 |
W |
|
TSOLDER |
Ball Soldering Temperature & Time |
260 ·10 |
°C·sec |
The HY62SF16101C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62SF16101C uses high performance full CMOS process technology and designed for high speed low power circuit technology. It is particularly well suited for used in high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V.