HY62LF16804B

Features: · Fully static operation and Tri-state output· TTL compatible inputs and outputs· Battery backup(LL/SL-part) - 1.2V(min) data retention· Standard pin configuration - 48-fBGAPinoutSpecifications Symbol Parameter Rating Unit Remark VIN, VOUT Input/Output Voltage -0.3 to Vcc+0...

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HY62LF16804B Picture
SeekIC No. : 004368372 Detail

HY62LF16804B: Features: · Fully static operation and Tri-state output· TTL compatible inputs and outputs· Battery backup(LL/SL-part) - 1.2V(min) data retention· Standard pin configuration - 48-fBGAPinoutSpecifica...

floor Price/Ceiling Price

Part Number:
HY62LF16804B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Description



Features:

·  Fully static operation and Tri-state output
·  TTL compatible inputs and outputs
·  Battery backup(LL/SL-part)
     - 1.2V(min) data retention
·  Standard pin configuration
    - 48-fBGA



Pinout

  Connection Diagram


Specifications

Symbol Parameter Rating Unit Remark
VIN, VOUT Input/Output Voltage -0.3 to Vcc+0.3 V  
Vcc Power Supply -0.3 to 3.6 V  
TA Operating Temperature 0 to 70 HY62LF16804B-C
-40 to 85 HY62LF16804B-I
TSTG Storage Temperature -55 to 150  
PD Power Dissipation 1.0 W  
TSOLDER Ball Soldering Temperature & Time 260`10 `sec  

Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied.

Exposure to the absolute maximum rating conditions for extended period may affect reliability.



Description

The HY62LF16804B is a high speed, super low power and 8Mbit full CMOS SRAM organized as 512K words by 16bits. The HY62LF16804B uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V.




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