HY62LF16404C

Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect reliability.

The HY62LF16404C is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. It uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power system application.

This device HY62LF16404C has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V.