Features: • Fully static operation and Tri-state output• TTL compatible inputs and outputs• Battery backup(L-part)-. 1.2V(min) data retention• Standard pin configuration-. 48-TSOP1PinoutSpecifications Symbol Parameter Rating Unit Remark VIN, VOUT Input/Output V...
HY62LF16206B-DT12C: Features: • Fully static operation and Tri-state output• TTL compatible inputs and outputs• Battery backup(L-part)-. 1.2V(min) data retention• Standard pin configuration-. 48...
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Features: ·Fully static operation andTri-state outputs ·TTL compatible inputsand outputs ·Low powe...
Symbol | Parameter | Rating | Unit | Remark |
VIN, VOUT | Input/Output Voltage | -0.3 to 3.3 | V | |
Vcc | Power Supply | -0.3 to 3.3 | V | |
TA | Operating Temperature | 0 to 70 | ||
TSTG | Storage Temperature | -40 to 125 | ||
PD | Power Dissipation | 1.0 | W | |
TSOLDER | Ball Soldering Temperature & Time | 260 • 10 | •se c |
Note :
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
The HY62LF16206B-DT12C is a high speed, super low power and 2Mbit full CMOS SRAM organized as 128K words by 16bits. The HY62LF16206B uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power system application.
This device HY62LF16206B-DT12C has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V.