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HY62KUT08081E

Features: · Fully static operation and Tri-state output· TTL compatible inputs and outputs· Low power consumption· Battery backup(L/LL-part) - 2.0V(min.) data retention· Standard pin configuration- 28 pin 600mil PDIP - 28 pin 330mil SOP - 28 pin 8x13.4 mm TSOP-I (Standard)PinoutSpecifications ...

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SeekIC No. : 004368363 Detail

HY62KUT08081E: Features: · Fully static operation and Tri-state output· TTL compatible inputs and outputs· Low power consumption· Battery backup(L/LL-part) - 2.0V(min.) data retention· Standard pin configuration- ...

HY62KUT08081E Data Sheet

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Part Number:
HY62KUT08081E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

·  Fully static operation and Tri-state output
·  TTL compatible inputs and outputs
·  Low power consumption
·  Battery backup(L/LL-part)
    - 2.0V(min.) data retention
·  Standard pin configuration
    - 28 pin 600mil PDIP
    - 28 pin 330mil SOP
    - 28 pin 8x13.4 mm TSOP-I (Standard)


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Rating
Unit
Vcc, VIN, VOUT
 Power Supply, Input/Output Voltage
-0.3 to 7.0
V
TA
 Operating Temperature HY62K(U,V)T08081E-C
0 to 70
°C
HY62K(U,V)T08081E-E
-25 to 85
°C
HY62K(U,V)T08081E-I
-40 to 85
°C
TSTG
 Storage Temperature
-65 to 150
°C
PD
 Power Dissipation
1.0
W
IOUT
 Data Output Current
50
mA
TSOLDER
 Lead Soldering Temperature & Time
260 ·10
°C·sec
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect reliability.


Description

The HY62KUT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynix's high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt.




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